A charge-coupled device detector was employed for the PL measurement at room temperature, with an He-Cd 325-nm laser as the excitation GSK1838705A source. The main peak see more position was around 680 nm. The electroluminescence (EL) spectra were taken from the Si NC LED with 5.5 periods of SiCN/SiC SLs as a function of forward current, which was measured at room temperature, as shown in Figure  3b. Both PL and EL showed a similar center peak position at 680 nm. This indicates that the PL and EL processes can be related to the same luminescence mechanism that originated

from the Si NCs. As shown in Figure  3b, the EL intensity increased with the increasing forward current. Figure  3c shows the light output powers of Si NC LEDs with and without 5.5 periods of SiCN/SiC SLs, which were GNS-1480 measured at room temperature, respectively. Light output power of the Si NC LEDs was measured through the top side of the Si NC LEDs at a single wavelength using a Si photodiode connected to an optical power meter (Newport 818-SL), not from integrated measurement, because the total light output power from the Si NC LEDs is very difficult to measure or calculate without a packaging. Light output power of the Si NC LED with 5.5 periods of SiCN/SiC SLs improved by 50% compared with that of the Si NC

LED without the SLs, as can be seen in Figure  3c. The power efficiency (output power/input power) is very important in real LED applications to reduce power consumption. The wall-plug

efficiencies (WPEs), as shown in Figure  3d, were calculated based on the I V data and light output power. The WPEs of Si NC LEDs with and without 5.5 periods of SiCN/SiC SLs were estimated to be 1.06 and 1.57 × 10−6% at an input voltage of 15 V, respectively. The WPE of Si NC LED with 5.5 periods of SiCN/SiC SLs increased by 40% compared with that of the Si NC LED without the SLs. With increasing input voltage, WPEs of the Si NC LEDs with and without the SLs decreased, as shown in Figure  3d. The WPEs of Si NC LEDs with and without the SLs have similar values over the input voltage of 20 V. Increasing the input voltage means that the input current injected into the Si NC LED increases. Despite Farnesyltransferase the increase in the current injected into the Si NC LED, decreasing the WPE suggests that the current injected into the Si NC LED would not efficiently transport into the Si NCs. This indicates that the increase in light output power as the current was increased was not enough. This result could be attributed to the defects in the SiN x used as the surrounding matrix. Since the SiN x contained Si NCs in the amorphous phase, more defects such as vacancies and dislocations could be created compared with the crystalline phase. Therefore, the current injected into the Si NC LED was not efficiently transported into the Si NCs but passed through the defects, resulting in the recombination of electron–hole pairs as the Si NCs decreased.