Figure 7 Evolution of PRN1371 datasheet the UV-vis spectra of the thin film [PAH(9.0)/PAA-AgNPs(9.0)] 40 . Evolution of the UV-vis spectra of the thin film [PAH(9.0)/PAA-AgNPs(9.0)]40 for a variable range of temperatures from room temperature, 50°C, 100°C, 150°C, to 200°C. Table 4 Thickness evolution of the thin films obtained LbL-E www.selleckchem.com/products/stattic.html deposition technique after thermal treatment Fabrication process Temperature Thickness (nm) LSPR (λmax; A max) [PAH(9.0)/PAA-AgNPs(9.0)]40 Ambient 642 ± 12 432.6 nm; 1.18 [PAH(9.0)/PAA-AgNPs(9.0)]40 50°C 611 ± 16 432.6 nm; 1.20 [PAH(9.0)/PAA-AgNPs(9.0)]40 100°C 600 ± 12

432.6 nm; 1.26 [PAH(9.0)/PAA-AgNPs(9.0)]40 150°C 552 ± 9 432.6 nm; 1.68 [PAH(9.0)/PAA-AgNPs(9.0)]40 200°C 452 ± 10 446.9 nm; 1.66 Thickness evolution of the LbL-E thin films and the location of the LSPR absorption bands (λmax) with their maxima absorbance values (A max) as a function of the temperature. A comparative study

between ISS process and LbL-E deposition technique In this section, a comparative study about both processes will be shown for a better understanding of the incorporation of AgNPs into thin films using wet chemistry reactions. In order to establish any significant differences, the evolution of the thin films will be studied for the higher number of bilayers and L/R cycles at room temperature (ambient) and after thermal post-treatment of 200°C. In addition, a study about the distribution of the AgNPs into the thin films will be necessary to understand the shift of the LSPR absorption bands. Figure 8 shows the UV-vis spectra of the thin films obtained by PI3K inhibitor ISS process and LbL-E deposition technique before and after thermal post-treatment (200°C). First of all, the location of old the LSPR absorption band without thermal treatment for the ISS process appears at a shorter wavelength position

(424.6 nm) in comparison with the LbL-E deposition technique (432.6 nm). This aspect related to the wavelength location of the LSPR absorption band shows a high dependence with the size of the AgNPs in the films. When AgNPs of higher size are incorporated into thin films, LSPR absorption band is located at higher wavelength position as it occurs in the LbL-E deposition technique. However, when smaller AgNPs are incorporated into the films, the LSPR absorption band is located at a lower wavelength position as it occurs in the ISS process. In addition, a shift of the LSPR absorption bands is observed in both processes after thermal post-treatment, being more notorious for the ISS process. One of the reasons of this displacement in wavelength is the better proximity of the AgNPs because of the partial thickness reduction after thermal post-treatment (confirmed in Tables 2 and 4) and as a result, the maxima absorbance values of the LSPR bands are increased.