The bias V depends on the built-in potential V bi, externally applied voltage V ext, and kT/e. As shown in Figure 6, the narrowing

of surface depletion region, which would facilitate the electrons to this website transport to the surface, also contribute to the improvement of the photocatalytic performance. Figure MAPK inhibitor 6 The schematic of the surface band bending of ZnO NWs. The energy bands bend upwards as they approach the surface due to the formation of the built-in electric field near the surface, finally results in a surface depletion region and electron–hole separation. Doping of In increases the electron concentration and reduces the width of surface depletion region W, which facilitates the electrons to transport to the surface. Conclusions In summary, the morphology, microstructure, and PL properties of In-doped ZnO NWs prepared by vapor transport deposition method were investigated. The nanowires exhibit switches of the orientation from [10 0] to an infrequent [02 3] direction and the surface from smooth to ripple-like with increasing selleck chemicals llc In doping content. The ZnO NWs with In content of 1.4 at.% have large

surface-to-volume ratio with lateral surfaces formed by (10 0) and (10 1) facets. Low-temperature PL shows two dominant emissions at 3.357 and 3.31 eV, indicative of the formation of InZn donors and stacking faults, respectively. The In-doped ZnO NWs do not show surface exciton emission, which indicates a low density of surface electron traps in our samples. We demonstrate that ZnO NWs with large surface-to-volume ratio, high electron these concentration, and low-surface trap density can be achieved simply by In doping, which are desirable for efficient photocatalysis. Acknowledgements This work was financially supported by the Natural Science Foundation of China under Grant nos. 51172204

and 51372223, Science and Technology Department of Zhejiang Province Project no. 2010R50020. References 1. Li JM, Dai LG, Wan XP, Zeng XL: An “edge to edge” jigsaw-puzzle two-dimensional vapor-phase transport growth of high-quality large-area wurtzite-type ZnO (0001) nanohexagons. Appl Phys Lett 2012, 101:173105.CrossRef 2. Luo JT, Zhu XY, Chen G, Zeng F, Pan F: Influence of the Mn concentration on the electromechanical response d(33) of Mn-doped ZnO films. Phys Stat Sol (RRL) 2010, 4:209.CrossRef 3. Tian ZRR, Voigt JA, Liu J, McKenzie B, McDermott MJ, Rodriguez MA, Konishi H, Xu HF: Complex and oriented ZnO nanostructures. Nat Mater 2003, 2:821.CrossRef 4. He HP, Tang HP, Ye ZZ, Zhu LP, Zhao BH, Wang L, Li XH: Temperature-dependent photoluminescence of quasialigned Al-doped ZnO nanorods. Appl Phys Lett 2007, 90:023104.