The cause of the poorer outcomes in cardiac retransplant patients is unclear.
Methods: P505-15 in vitro This study was a retrospective analysis of 859 adult cardiac transplant patients. Of these, 45 (5.7%) under-went cardiac retransplantation at 8.2 +/- 5.3 (mean +/- SD) years after the first transplant, primarily for severe transplant vasculopathy (n = 42).
Results: One-year survival for retransplant patients was significantly lower compared
with de novo transplant patients. (75% vs 87%; P < 0.003). Twenty-three patients died due to either malignancy (n = 8), infection (n = 6), rejection (n = 3), sudden death (n = 2), recurrent transplant coronary artery disease (n = 2) or post-operative bleeding (n = 1).
Conclusion: Although cardiac retransplantation has immediate life-saving benefits, survival is lower compared with de novo cardiac transplantation due to higher rates of malignancy and infection. J Heart Lung Transplant 2009;28:1072-74. Copyright (C) 2009 by the International Society for Heart and Lung Transplantation.”
“The photon absorption in Si quantum dots (QDs) embedded in SiO(2) has been systematically
investigated by varying several parameters of the QD synthesis. Plasma-enhanced chemical vapor deposition (PECVD) or magnetron cosputtering (MS) have been used to deposit, upon quartz substrates, single layer, or multilayer structures of Si-rich-SiO(2) (SRO) with different Si content (43-46 at. %.). SRO samples have been annealed for I h in the 450-1250 this website degrees C range and characterized by optical absorption measurements, photoluminescence analysis, Rutherford Nepicastat backscattering spectrometry and x-ray Photoelectron Spectroscopy. After annealing up to 900 degrees C SRO films grown by MS show a higher absorption coefficient and a lower optical bandgap (similar to 2.0 eV) in comparison with that of PECVD samples., due to the lower density of Si-Si bonds and to the presence of nitrogen
in PECVD materials. By increasing the Si content a reduction in the optical bandgap has been recorded, pointing out the role of Si-Si bonds density in the absorption process in small amorphous Si QDs. Both the photon absorption probability and energy threshold in amorphous Si QDs are higher than in bulk amorphous Si, evidencing a quantum confinement effect. For temperatures higher than 900 degrees C both the materials show an increase in the optical bandgap due to the amorphous-crystal line transition of the Si QDs. Fixed the SRO stoichiometry, no difference in the optical bandgap trend of multilayer or single layer structures is evidenced. These data can be profitably used to better implement Si QDs for future PV technologies. (C) 2009 American Institute of Physics. [doi:10.1063/1.3259430]“
“The purpose of the present study was to analyze the longer-term results for a previously reported cohort of patients who were managed with cementless acetabular fixation at the time of revision arthroplasty.